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CY14B104M Datasheet 4-Mbit (512 K x 8/256 K x 16) nvSRAM

Manufacturer: Cypress (now Infineon)

Download the CY14B104M datasheet PDF. This datasheet also includes the CY14B104K variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY14B104K-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

CY14B104K/CY14B104M 4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time Clock 4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time.

Key Features

  • 25 ns and 45 ns access times.
  • Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16 (CY14B104M).
  • Hands off automatic STORE on power-down with only a small capacitor.
  • STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down.
  • RECALL to SRAM is initiated by software or power-up.
  • High reliability.
  • Infinite read, write, and RECALL cycles.
  • 1 million STORE cycles to QuantumTrap.
  • 20 year data retention.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY14B104K 4-Mbit (512 K x 8/256 K x 16) nvSRAM
CY14B104L 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104LA 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104N 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B104NA 4-Mbit (512K x 8/256K x 16) nvSRAM
CY14B101I 1-Mbit (128 K x 8) Serial (I2C) nvSRAM
CY14B101J 1-Mbit (128 K X 8) Serial (I2C) nvSRAM
CY14B101K 1 Mbit (128K x 8) nvSRAM
CY14B101KA 1-Mbit nvSRAM
CY14B101L 1-Mbit (128K x 8) nvSRAM