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CY14B104L - 4-Mbit (512K x 8/256K x 16) nvSRAM

Datasheet Summary

Description

The Cypress CY14B104L/CY14B104N is a fast static RAM, with a nonvolatile element in each memory cell.

The memory is organized as 512K words of 8 bits each or 256K words of 16 bits each.

Features

  • Functional.

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Datasheet preview – CY14B104L

Datasheet Details

Part number CY14B104L
Manufacturer Cypress Semiconductor
File Size 710.92 KB
Description 4-Mbit (512K x 8/256K x 16) nvSRAM
Datasheet download datasheet CY14B104L Datasheet
Additional preview pages of the CY14B104L datasheet.

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Other Datasheets by Cypress Semiconductor
  • CY14B104LA - 4-Mbit (512K x 8/256K x 16) nvSRAM
  • CY14B104K - 4-Mbit (512 K x 8/256 K x 16) nvSRAM
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  • CY14B104N - 4-Mbit (512K x 8/256K x 16) nvSRAM
  • CY14B104NA - 4-Mbit (512K x 8/256K x 16) nvSRAM
  • CY14B101I - 1-Mbit (128 K x 8) Serial (I2C) nvSRAM
  • CY14B101J - 1-Mbit (128 K X 8) Serial (I2C) nvSRAM
  • CY14B101K - 1 Mbit (128K x 8) nvSRAM

Full PDF Text Transcription

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PRELIMINARY CY14B104L, CY14B104N 4-Mbit (512K x 8/256K x 16) nvSRAM Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Functional Description The Cypress CY14B104L/CY14B104N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K words of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory.
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