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CY14B108L Datasheet

Manufacturer: Cypress (now Infineon)
CY14B108L datasheet preview

Datasheet Details

Part number CY14B108L
Datasheet CY14B108L-CypressSemiconductor.pdf
File Size 605.00 KB
Manufacturer Cypress (now Infineon)
Description 8-Mbit (1024 K x 8/512 K x 16) nvSRAM
CY14B108L page 2 CY14B108L page 3

CY14B108L Overview

The Cypress CY14B108L/CY14B108N is a fast static RAM (SRAM), with a nonvolatile element in each memory cell. The memory is organized as 1024 Kbytes.

CY14B108L Key Features

  • 20 ns, 25 ns, and 45 ns access times
  • Hands off automatic STORE on power-down with only a small
  • STORE to QuantumTrap nonvolatile elements initiated by
  • RECALL to SRAM initiated by software or power-up
  • Infinite Read, Write, and RECALL cycles
  • 1 million STORE cycles to QuantumTrap
  • 20 year data retention
  • Single 3 V +20, -10 operation
  • Industrial temperature
  • Packages
Cypress (now Infineon) logo - Manufacturer

More Datasheets from Cypress (now Infineon)

See all Cypress (now Infineon) datasheets

Part Number Description
CY14B108K 8-Mbit (1024 K x 8/512 K x 16) nvSRAM
CY14B108M 8-Mbit (1024 K x 8/512 K x 16) nvSRAM
CY14B108N 8-Mbit (1024 K x 8/512 K x 16) nvSRAM
CY14B101I 1-Mbit (128 K x 8) Serial (I2C) nvSRAM
CY14B101J 1-Mbit (128 K X 8) Serial (I2C) nvSRAM
CY14B101K 1 Mbit (128K x 8) nvSRAM
CY14B101KA 1-Mbit nvSRAM
CY14B101L 1-Mbit (128K x 8) nvSRAM
CY14B101LA 1-Mbit nvSRAM
CY14B101MA 1-Mbit nvSRAM

CY14B108L Distributor

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