CY14B108L
CY14B108L is 8-Mbit (1024 K x 8/512 K x 16) nvSRAM manufactured by Cypress.
CY14B108L CY14B108N
8-Mbit (1024 K × 8/512 K × 16) nv SRAM
8-Mbit (1024 K × 8/512 K × 16) nv SRAM
Features
- 20 ns, 25 ns, and 45 ns access times
- Internally organized as 1024 K × 8 (CY14B108L) or 512 K ×16
(CY14B108N)
- Hands off automatic STORE on power-down with only a small capacitor
- STORE to Quantum Trap nonvolatile elements initiated by software, device pin, or Auto Store on power-down
- RECALL to SRAM initiated by software or power-up
- Infinite Read, Write, and RECALL cycles
- 1 million STORE cycles to Quantum Trap
- 20 year data retention
- Single 3 V +20,
- 10 operation
- Industrial temperature
- Packages
- 44-/54-pin thin small outline package (TSOP) Type II
- 48-ball fine-pitch ball grid array (FBGA)
- Pb-free and restriction of hazardous substances (Ro HS) pliant
Functional Description
The Cypress CY14B108L/CY14B108N is a fast static RAM (SRAM), with a nonvolatile element in each memory cell. The memory is organized as 1024...
