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CY14B116K - 16-Mbit (2048 K x 8/1024 K x 16) nvSRAM

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Overview

CY14B116K/CY14B116M 16-Mbit (2048 K × 8/1024 K × 16) nvSRAM with Real Time.

Key Features

  • 16-Mbit nonvolatile static random access memory (nvSRAM).
  • 25-ns and 45-ns access times.
  • Internally organized as 2048 K × 8 (CY14B116K), 1024 K × 16 (CY14B116M).
  • Hands-off automatic STORE on power-down with only a small capacitor.
  • STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down.
  • RECALL to SRAM initiated by software or power-up.
  • High reliability.
  • Infinite read, write, and RECALL cycles.
  • 1 milli.

More Datasheets from Cypress (now Infineon)

Part Number Description
CY14B116L 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
CY14B116M 16-Mbit (2048 K x 8/1024 K x 16) nvSRAM
CY14B116N 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
CY14B116S 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
CY14B101I 1-Mbit (128 K x 8) Serial (I2C) nvSRAM
CY14B101J 1-Mbit (128 K X 8) Serial (I2C) nvSRAM
CY14B101K 1 Mbit (128K x 8) nvSRAM
CY14B101KA 1-Mbit nvSRAM
CY14B101L 1-Mbit (128K x 8) nvSRAM
CY14B101LA 1-Mbit nvSRAM