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Cypress Semiconductor Electronic Components Datasheet

CY14B116N Datasheet

16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM

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CY14B116L/CY14B116N/CY14B116S
CY14E116L/CY14E116N/CY14E116S
16-Mbit (2048K × 8/1024K × 16/512K × 32)
nvSRAM
16-Mbit (2048K × 8/1024K × 16/512K × 32) nvSRAM
Features
16-Mbit nonvolatile static random access memory (nvSRAM)
25-ns, 30-ns, 35-ns, and 45-ns access times
Internally organized as 2048K × 8 (CY14X116L),
1024K × 16 (CY14X116N), 512K × 32 (CY14X116S)
Hands-off automatic STORE on power-down with only a
small capacitor
STORE to QuantumTrap nonvolatile elements is initiated by
software, device pin, or AutoStore on power-down
RECALL to SRAM initiated by software or power-up
High reliability
Infinite read, write, and RECALL cycles
1 million STORE cycles to QuantumTrap
Data retention: 20 years
Sleep mode operation
Low power consumption
Active current of 75 mA at 45 ns
Standby mode current of 650 A
Sleep mode current of 10 A
Operating voltages:
CY14B116X: VCC = 2.7 V to 3.6 V
CY14E116X: VCC = 4.5 V to 5.5 V
Industrial temperature: –40 C to +85 C
Packages
44-pin thin small-outline package (TSOP II)
48-pin thin small-outline package (TSOP I)
54-pin thin small-outline package (TSOP II)
60-ball fine-pitch ball grid array (FBGA) package
165-ball fine-pitch ball grid array (FBGA) package
Restriction of hazardous substances (RoHS) compliant
Offered speeds
44-pin TSOP II: 25 ns, 35 ns and 45 ns
48-pin TSOP I: 30 ns, 35 ns and 45 ns
54-pin TSOP II: 25 ns, 35 ns and 45 ns
60-ball FBGA: 25 ns and 35 ns
165-ball FBGA: 25 ns, 35 ns, and 45 ns
Functional Description
The Cypress CY14X116L/CY14X116N/CY14X116S is a fast
SRAM, with a nonvolatile element in each memory cell. The
memory is organized as 2048K bytes of 8 bits each or 1024K
words of 16 bits each or 512K words of 32 bits each. The
embedded nonvolatile elements incorporate QuantumTrap
technology, producing the world’s most reliable nonvolatile
memory. The SRAM can be read and written an infinite number
of times. The nonvolatile data residing in the nonvolatile
elements do not change when data is written to the SRAM. Data
transfers from the SRAM to the nonvolatile elements (the
STORE operation) takes place automatically at power-down. On
power-up, data is restored to the SRAM (the RECALL operation)
from the nonvolatile memory. Both the STORE and RECALL
operations are also available under software control.
For a complete list of related documentation, click here.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-67793 Rev. *O
• San Jose, CA 95134-1709 • 408-943-2600
Revised December 7, 2018


Cypress Semiconductor Electronic Components Datasheet

CY14B116N Datasheet

16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM

No Preview Available !

CY14B116L/CY14B116N/CY14B116S
CY14E116L/CY14E116N/CY14E116S
Logic Block Diagram[1, 2, 3]
A0-A11
QUANTUMTRAP
4096 X 4096
STORE
STATIC RAM
ARRAY
4096 X 4096
RECALL
VCC VCAP
POWER CONTROL
SLEEP MODE
CONTROL
ZZ
STORE / RECALL
CONTROL
HSB
SOFTWARE
DETECT
A2-A14
OE [4]
CE
WE
DQ 0-DQ 31
COLUMN IO
COLUMN DECODER
BA /BLE
BB /BHE
BC
BD
ZZ
A12-A20
Notes
1. Address A0–A20 for ×8 configuration, address A0–A19 for ×16 configuration and address A0–A18 for ×32 configuration.
2. Data DQ0–DQ7 for ×8 configuration, data DQ0–DQ15 for ×16 configuration and data DQ0–DQ31 for ×32 configuration.
3. BLE, BHE are applicable for ×16 configuration and BA, BB, BC, BD are applicable for ×32 configuration only.
4. TSOP II package is offered in single CE. TSOP I and BGA packages are offered in dual CE options. In this datasheet, for a dual CE device, CE refers to the internal
logical combination of CE1 and CE2 such that when CE1 is LOW and CE2 is HIGH, CE is LOW. For all other cases CE is HIGH.
Document Number: 001-67793 Rev. *O
Page 2 of 40


Part Number CY14B116N
Description 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
Maker Cypress Semiconductor
Total Page 30 Pages
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