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CY14E116N Datasheet 16-mbit (2048 K X 8/1024 K X 16/512 K X 32) Nvsram

Manufacturer: Cypress (now Infineon)

Overview: PRELIMINARY CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S 16-Mbit (2048 K × 8/1024 K × 16/512 K × 32).

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The C ypress CY14X1 16L/CY14X116N/CY14X116S i s a fast SRAM, with a no nvolatile el ement in each memory cel l.

T he memory is organized as 2048 K bytes of 8 bits each or 1024 K words of 16 bits each o r 512 K words of 32 bit s each .

T he embedded non volatile elemen ts inco rporate Qu antumTrap technology, prod ucing the world’s mo st reli able nonvolatile memory.

Key Features

  • 16-Mbit nonvolatile static random access memory (nvSRAM).
  • 25-ns, 30-ns and 45-ns access times.
  • Internally organized as 2048 K × 8 (CY14X116L), 1024 K × 16 (CY14X116N), 512 K × 32 (CY14X116S).
  • Hands-off automatic STORE on power-down with only a small capacitor.
  • STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down.
  • RECALL to SRAM initiated by software or power-up.
  • High reliability.
  • Infinite read, write, and RE.

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More Datasheets from Cypress (now Infineon)

Part Number Description
CY14E116L 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
CY14E116S 16-Mbit (2048 K x 8/1024 K x 16/512 K x 32) nvSRAM
CY14E101I 1-Mbit (128 K x 8) Serial (I2C) nvSRAM
CY14E101J 1-Mbit (128 K X 8) Serial (I2C) nvSRAM
CY14E101PA 1-Mbit (128K x 8) Serial (SPI) nvSRAM
CY14E064I 64-Kbit (8 K x 8) Serial (I2C) nvSRAM
CY14E064L 64 Kbit (8K x 8) nvSRAM
CY14E064PA 64-Kbit (8 K x 8) SPI nvSRAM
CY14E256I 256-Kbit (32 K x 8) Serial (I2C) nvSRAM
CY14E256L 256-Kbit (32K x 8) nvSRAM