CY14E116S Datasheet | Cypress

PRELIMINARY CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S 16-Mbit (2048 K × 8/1024 K × 16/512 K × 32) nv SRAM Features 16-Mbit nonvolatile static random access memory (nv SRAM) - 25-ns, 30-ns and 45-ns access times - Internally organized as 2048 K × 8 (CY14X116L), 1024 K × 16 (CY14X116N), 512 K × 32 (CY14X116S) - Hands-off automatic STORE on power-down with only a small capacitor - STORE to Quantum Trap nonvolatile elements is initiated by software, device pin, or Auto Store on power-down - RECALL to SRAM initiated by software or power-up - High reliability - Infinite read, write, and RECALL cycles - 1 million STORE cycles to Quantum Trap - Data retention: 20 years - Sleep mode operation - Low power consumption - Active current of 75 m A at 45 ns - Standby mode current of 650 A - Sleep mode current of 10 A - - - Offered speeds - 44-pin TSOP II: 25 ns and 45 ns - 48-pin TSOP I: 30 ns and 45 ns - 54-pin TSOP II: 25 ns and 45 ns - 165-ball FBGA: 25 ns and 45 ns Functional Description The C ypress CY14X1 16L/CY14X116N/CY14X116S i s a fast SRAM, with a no nvolatile el ement in each memory cel l. T he memory is organized as 2048 K bytes of 8 bits each or 1024 K words of 16 bits each o r 512 K words of 32 bit s each . T he embedded non volatile elemen ts inco rporate Qu antum Trap technology, prod ucing the world’s mo st reli able nonvolatile memory. The SRAM can be read and written an infinite number of times. The nonvolatile d ata residin g in the nonvolatile elements do not change when data is written to the SRAM. Data transfers from th e SRAM to the nonvolatile e lements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from th e non volatile me mory. Both th e ST ORE an d RECALL operations are also available under software control. Operating voltages: - CY14B116X: VCC = 2.7 V to 3.6 V - CY14E116X: VCC = 4.5 V to 5.5 V Industrial...