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CY14V116N - 16-Mbit (1024 K x 16) nvSRAM

Description

The Cypress CY14V

Features

  • 16-Mbit nonvolatile static random access memory (nvSRAM).
  • 30-ns and 45-ns access times.
  • Logically organized as 1024 K × 16.
  • Hands-off automatic STORE on power-down with only a small capacitor.
  • STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down.
  • RECALL to SRAM initiated by software or power-up.
  • High reliability.
  • Infinite read, write, and RECALL cycles.
  • 1 million STORE cycles to QuantumTrap.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY14V116N 16-Mbit (1024 K × 16) nvSRAM Features ■ 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 30-ns and 45-ns access times ❐ Logically organized as 1024 K × 16 ❐ Hands-off automatic STORE on power-down with only a small capacitor ❐ STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down ❐ RECALL to SRAM initiated by software or power-up ■ High reliability ❐ Infinite read, write, and RECALL cycles ❐ 1 million STORE cycles to QuantumTrap ❐ Data retention: 20 years ■ Sleep mode operation ■ Low power consumption ❐ Active current of 75 mA at 45 ns ❐ Standby mode current of 650 A ❐ Sleep mode current of 10 A ■ Operating voltage ❐ Core VCC = 2.7 V to 3.6 V; I/O VCCQ = 1.65 V to 1.
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