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CY14V116F7 - 16-Mbit nvSRAM

Key Features

  • 16-Mbit nonvolatile static random access memory (nvSRAM).
  • Performance up to 33 MT/s per I/O.
  • Maximum data throughput using ×16 bus.
  • 528 Mbps.
  • Industry-standard asynchronous NAND Flash interface with reduced instruction set.
  • Shared address, data, and command bus.
  • Address and command bus is 8 bits.
  • Command is sent in one or two command cycles.
  • Address is sent in five address cycles.
  • Data bus width is ×8 or ×16 bits.
  • Modes.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY14V116G7 16-Mbit nvSRAM
CY14V116N 16-Mbit (1024 K x 16) nvSRAM
CY14V101LA 1-Mbit nvSRAM
CY14V101NA 1-Mbit nvSRAM
CY14V101Q3 1 Mbit (128 K x 8) Serial SPI nvSRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY14V116F7 CY14V116G7 16-Mbit nvSRAM with Asynchronous NAND Interface 16-Mbit nvSRAM with Asynchronous NAND Interface Features ■ 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ Performance up to 33 MT/s per I/O ❐ Maximum data throughput using ×16 bus – 528 Mbps ❐ Industry-standard asynchronous NAND Flash interface with reduced instruction set ❐ Shared address, data, and command bus • Address and command bus is 8 bits • Command is sent in one or two command cycles • Address is sent in five address cycles • Data bus width is ×8 or ×16 bits ■ Modes of operation: ❐ Asynchronous NAND Interface I/O with 30-ns access time ❐ Status Register with a software method for detecting the following: • Nonvolatile STORE completion • Pass/Fail condition of previous command • Write protect status