CY14V116N
CY14V116N is 16-Mbit (1024 K x 16) nvSRAM manufactured by Cypress.
16-Mbit (1024 K × 16) nv SRAM
Features
- 16-Mbit nonvolatile static random access memory (nv SRAM)
- 30-ns and 45-ns access times
- Logically organized as 1024 K × 16
- Hands-off automatic STORE on power-down with only a small capacitor
- STORE to Quantum Trap nonvolatile elements is initiated by software, device pin, or Auto Store on power-down
- RECALL to SRAM initiated by software or power-up
- High reliability
- Infinite read, write, and RECALL cycles
- 1 million STORE cycles to Quantum Trap
- Data retention: 20 years
- Sleep mode operation
- Low power consumption
- Active current of 75 m A at 45 ns
- Standby mode current of 650 A
- Sleep mode current of 10 A
- Operating voltage
- Core VCC = 2.7 V to 3.6 V; I/O VCCQ = 1.65 V to 1.95 V
- Industrial temperature:
- 40 C to +85 C
- 165-ball fine-pitch ball grid array (FBGA) package
- Restriction of hazardous substances (Ro HS) pliant
Functional Description
The Cypress...
