CY15B104Q Datasheet | Cypress

Features - 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8 - High-endurance 100 trillion (1014) read/writes - 151-year data retention (See the Data Retention and Endurance table) - No Delay™ writes - Advanced high-reliability ferroelectric process - Very fast serial peripheral interface (SPI) - Up to 40-MHz frequency - Direct hardware replacement for serial flash and EEPROM - Supports SPI mode 0 (0, 0) and mode 3 (1, 1) - Sophisticated write protection scheme - Hardware protection using the Write Protect (WP) pin - Software protection using Write Disable instruction - Software block protection for 1/4, 1/2, or entire array - Device ID - Manufacturer ID and Product ID - Low power consumption - 300 A active current at 1 MHz - 100 A (typ) standby current - 3 A (typ) sleep mode current - Low-voltage operation: VDD = 2.0 V to 3.6 V - Industrial temperature: - 40 C to +85 C - Packages - 8-pin small outline integrated circuit (SOIC) package - 8-pin thin dual flat no leads (TDFN) package - Restriction of hazardous substances (Ro HS) pliant Functional Description The CY15B104Q is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the plexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the CY15B104Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can mence without the need for data polling. In addition, the product offers substantial write endurance pared to other nonvolatile memories. The CY15B104Q is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than...