CY15B104Q - 4-Mbit (512 K x 8) Serial (SPI) F-RAM

Cypress Semiconductor

Datasheet Details

The CY15B104Q is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process..

4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8.
High-endurance 100 trillion (1014) read/writes.
151-year data retention (See the Data Retention and Endurance table).
NoDelay™ writes.
Advanced high-reliability ferroelectric process.
Very fast serial peripheral interface (SPI).
Up to 40-MHz frequency.
Direct hardware replacement for serial flash and.

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Cypress Semiconductor CY15B104Q-like datasheet

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CY15B104Q Stock/Price