CY15B256J
Overview
- 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process
- Fast two-wire serial interface (I2C) ❐ Up to 3.4-MHz frequency[1] ❐ Direct hardware replacement for serial EEPROM ❐ Supports legacy timings for 100 kHz and 400 kHz
- Device ID ❐ Manufacturer ID and Product ID
- Low power consumption ❐ 175-A active current at 100 kHz ❐ 150-A standby current ❐ 8-A sleep mode current
- Low-voltage operation: VDD = 2.0 V to 3.6 V
- Automotive-A temperature: -40 °C to +85 °C
- 8-pin small outline integrated circuit (SOIC) package
- Restriction of hazardous substances (RoHS) compliant Logic Block Diagram Functional
