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Cypress Semiconductor Electronic Components Datasheet

CY15B256J Datasheet

256-Kbit (32K x 8) Automotive Serial (I2C) F-RAM

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CY15B256J
256-Kbit (32K × 8) Automotive-E Serial
(I2C) F-RAM
256-Kbit (32K × 8) Automotive-E Serial (I2C) F-RAM
Features
256-Kbit ferroelectric random access memory (F-RAM)
logically organized as 32K × 8
High-endurance 10 trillion (1013) read/writes
121-year data retention (See Data Retention and Endurance
on page 12)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire serial interface (I2C)
Up to 3.4-MHz frequency[1]
Direct hardware replacement for serial EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID
Manufacturer ID and Product ID
Low power consumption
500-A active current at 100 kHz
500-A standby current
12-A sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Automotive-E temperature: –40 C to +125 C
8-pin small outline integrated circuit (SOIC) package
AEC Q100 Grade 1 compliant
Restriction of hazardous substances (RoHS) compliant
Functional Description
The CY15B256J is a 256-Kbit nonvolatile memory employing an
advanced ferroelectric process. An F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 121 years while eliminating the complexities,
overhead, and system-level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike EEPROM, the CY15B256J performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. F-RAM also exhibits much lower power during writes
than EEPROM because write operations do not require an
internally elevated power supply voltage for write circuits. The
CY15B256J is capable of supporting 1013 read/write cycles, or
10 million times more write cycles than EEPROM.
These capabilities make the CY15B256J ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The combi-
nation of features allows more frequent data writing with less
overhead for the system.
The CY15B256J provides substantial benefits to users of serial
EEPROM as a hardware drop-in replacement. The device incor-
porates a read-only Device ID that allows the host to determine
the manufacturer, product density, and product revision. The
device specifications are guaranteed over an Automotive-E
temperature range of –40 C to +125 C.
Logic Block Diagram
Counter
Address
Latch
15
32 K x 8
F-RAM Array
8
SDA
SCL
WP
A0-A2
Serial to Parallel
Converter
Control Logic
Data Latch
8
8
Device ID and
Manufacturer ID
Note
1.
The CY15B256J does
Refer to DC Electrical
not meet the NXP
Characteristics on
I2C specification in the Fast-mode
page 11 for more details.
Plus
(Fm+,
1
MHz)
for
IOL
and
in
the
High
Speed
Mode
(Hs-mode,
3.4
MHz)
for
Vhys.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-10968 Rev. *C
• San Jose, CA 95134-1709 • 408-943-2600
Revised November 26, 2018


Cypress Semiconductor Electronic Components Datasheet

CY15B256J Datasheet

256-Kbit (32K x 8) Automotive Serial (I2C) F-RAM

No Preview Available !

CY15B256J
Contents
Pinout ................................................................................ 3
Pin Definitions .................................................................. 3
Functional Overview ........................................................ 4
Memory Architecture ........................................................ 4
Two-wire Interface ............................................................ 4
STOP Condition (P) ..................................................... 4
START Condition (S) ................................................... 4
Data/Address Transfer ................................................ 5
Acknowledge/No-acknowledge ................................... 5
High Speed Mode (Hs-Mode) ...................................... 6
Slave Device Address ................................................. 6
Addressing Overview .................................................. 6
Data Transfer .............................................................. 6
Memory Operation ............................................................ 7
Write Operation ........................................................... 7
Read Operation ........................................................... 8
Sleep Mode ................................................................. 9
Device ID ......................................................................... 10
Maximum Ratings ........................................................... 11
Operating Range ............................................................. 11
DC Electrical Characteristics ........................................ 11
Data Retention and Endurance ..................................... 12
Example of an F-RAM Life Time
in an AEC-Q100 Automotive Application ..................... 12
Capacitance .................................................................... 12
Thermal Resistance ........................................................ 12
AC Test Loads and Waveforms ..................................... 13
AC Test Conditions ........................................................ 13
AC Switching Characteristics ....................................... 14
Power Cycle Timing ....................................................... 15
Ordering Information ...................................................... 16
Ordering Code Definitions ......................................... 16
Package Diagram ............................................................ 17
Acronyms ........................................................................ 18
Document Conventions ................................................. 18
Units of Measure ....................................................... 18
Document History Page ................................................. 19
Sales, Solutions, and Legal Information ...................... 20
Worldwide Sales and Design Support ....................... 20
Products .................................................................... 20
PSoC® Solutions ...................................................... 20
Cypress Developer Community ................................. 20
Technical Support ..................................................... 20
Document Number: 002-10968 Rev. *C
Page 2 of 20


Part Number CY15B256J
Description 256-Kbit (32K x 8) Automotive Serial (I2C) F-RAM
Maker Cypress Semiconductor
Total Page 20 Pages
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