CY15E004Q
Overview
- 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 10 trillion (1013) read/writes ❐ 121-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process
- Very fast serial peripheral interface (SPI) ❐ Up to 16 MHz frequency ❐ Direct hardware replacement for serial flash and EEPROM ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
- Sophisticated write protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4, 1/2, or entire array
- Low power consumption ❐ 300 μA active current at 1 MHz ❐ 10 μA (typ) standby current at +85 °C
- Voltage operation: VDD = 4.5 V to 5.5 V
- Automotive-E temperature: -40 °C to +125 °C
