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Cypress Semiconductor Electronic Components Datasheet

CY15E004Q Datasheet

4-Kbit (512 x 8) Serial (SPI) Automotive F-RAM

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CY15E004Q
4-Kbit (512 × 8) Serial (SPI) Automotive
F-RAM
4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM
Features
4-Kbit ferroelectric random access memory (F-RAM) logically
organized as 512 × 8
High-endurance 10 trillion (1013) read/writes
121-year data retention (See the Data Retention and
Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 16 MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Low power consumption
300 μA active current at 1 MHz
10 μA (typ) standby current at +85 °C
Voltage operation: VDD = 4.5 V to 5.5 V
Automotive-E temperature: –40 °C to +125 °C
8-pin small outline integrated circuit (SOIC) package
AEC Q100 Grade 1 compliant
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
WP
CS
HOLD
SCK
Instruction Decoder
Clock Generator
Control Logic
Write Protect
Functional Description
The CY15E004Q is a 4-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 121 years
while eliminating the complexities, overhead, and system level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the CY15E004Q performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The CY15E004Q is capable of supporting
1013 read/write cycles, or 10 million times more write cycles than
EEPROM.
These capabilities make the CY15E004Q ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The CY15E004Q provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
CY15E004Q uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
specifications are guaranteed over an automotive-e temperature
range of –40 °C to +125 °C.
512 x 8
F-RAM Array
Instruction Register
Address Register
Counter
9
8
SI SO
Data I/O Register
2
Nonvolatile Status
Register
Errata: The Write Enable Latch (WEL) bit in the Status Register of CY15E004Q part doesn’t clear after executing the memory write (WRITE) operation at memory
location(s) from 0x100 to 0x1FF. For more information, see Errata on page 19. Details include errata trigger conditions, scope of impact, available workarounds, and
silicon revision applicability.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-10031 Rev. *B
• San Jose, CA 95134-1709 • 408-943-2600
Revised April 5, 2017


Cypress Semiconductor Electronic Components Datasheet

CY15E004Q Datasheet

4-Kbit (512 x 8) Serial (SPI) Automotive F-RAM

No Preview Available !

CY15E004Q
Contents
Pinout ................................................................................ 3
Pin Definitions .................................................................. 3
Functional Overview ........................................................ 4
Memory Architecture ........................................................ 4
Serial Peripheral Interface – SPI Bus .............................. 4
SPI Overview ............................................................... 4
SPI Modes ................................................................... 5
Power Up to First Access ............................................ 6
Command Structure .................................................... 6
WREN - Set Write Enable Latch ................................. 6
WRDI - Reset Write Enable Latch ............................... 6
Status Register and Write Protection ............................. 6
RDSR - Read Status Register ..................................... 7
WRSR - Write Status Register .................................... 7
Memory Operation ............................................................ 8
Write Operation ........................................................... 8
Read Operation ........................................................... 8
HOLD Pin Operation ................................................... 9
Endurance ................................................................. 10
Maximum Ratings ........................................................... 11
Operating Range ............................................................. 11
DC Electrical Characteristics ........................................ 11
Data Retention and Endurance ..................................... 12
Example of an F-RAM Life Time
in an AEC-Q100 Automotive Application ..................... 12
Capacitance .................................................................... 12
Thermal Resistance ........................................................ 12
AC Test Conditions ........................................................ 12
AC Switching Characteristics ....................................... 13
Power Cycle Timing ....................................................... 15
Ordering Information ...................................................... 16
Ordering Code Definitions ......................................... 16
Package Diagram ............................................................ 17
Acronyms ........................................................................ 18
Document Conventions ................................................. 18
Units of Measure ....................................................... 18
Errata ............................................................................... 19
Part Numbers Affected .............................................. 19
Qualification Status ................................................... 19
Errata Summary ........................................................ 19
Document History Page ................................................. 21
Sales, Solutions, and Legal Information ...................... 22
Worldwide Sales and Design Support ....................... 22
Products .................................................................... 22
PSoC® Solutions ...................................................... 22
Cypress Developer Community ................................. 22
Technical Support ..................................................... 22
Document Number: 002-10031 Rev. *B
Page 2 of 22


Part Number CY15E004Q
Description 4-Kbit (512 x 8) Serial (SPI) Automotive F-RAM
Maker Cypress Semiconductor
Total Page 22 Pages
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