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CY15B064J - 64-Kbit (8K x 8) Serial (I2C) Automotive F-RAM

General Description

The CY15B064J is a 64-Kbit nonvolatile memory employing

Key Features

  • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8.
  • High-endurance 10 trillion (1013) read/writes.
  • 121-year data retention (See the Data Retention and Endurance table).
  • NoDelay™ writes.
  • Advanced high-reliability ferroelectric process.
  • Fast 2-wire Serial interface (I2C).
  • Up to 1-MHz frequency.
  • Direct hardware replacement for serial (I2C) EEPROM.
  • Supports legacy timings for 100 kHz and 400 kHz.
  • Low power consumption.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY15B064Q 64-Kbit (8K x 8) Serial (SPI) Automotive F-RAM
CY15B004Q 4-Kbit (512 x 8) Serial (SPI) Automotive F-RAM
CY15B101N 1-Mbit (64K x 16) Automotive F-RAM Memory
CY15B102N 2-Mbit (128K x 16) Automotive F-RAM Memory
CY15B102Q 2-Mbit (256 K x 8) Serial (SPI) Automotive F-RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY15B064J 64-Kbit (8K × 8) Serial (I2C) Automotive F-RAM 64-Kbit (8K × 8) Serial (I2C) Automotive F-RAM Features ■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8 ❐ High-endurance 10 trillion (1013) read/writes ❐ 121-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Fast 2-wire Serial interface (I2C) ❐ Up to 1-MHz frequency ❐ Direct hardware replacement for serial (I2C) EEPROM ❐ Supports legacy timings for 100 kHz and 400 kHz ■ Low power consumption ❐ 120 A (typ) active current at 100 kHz ❐ 6 A (typ) standby current ■ Voltage operation: VDD = 3.0 V to 3.