CY15B101N
Overview
- 1-Mbit ferroelectric random access memory (F-RAM™) logically organized as 64K × 16 ❐ Configurable as 128K × 8 using UB and LB ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page-mode operation for 30-ns cycle time ❐ Advanced high-reliability ferroelectric process
- SRAM compatible ❐ Industry-standard 64K × 16 SRAM pinout ❐ 60-ns access time, 90-ns cycle time
- Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface-mount solution, no rework steps ❐ Superior for moisture, shock, and vibration
- Low power consumption ❐ Active current 7 mA (typ) ❐ Standby current 120 A (typ)
- Low-voltage operation: VDD = 2.0 V to 3.6 V
- Automotive-A temperature: -40 °C to +85 °C Logic Block Diagram
