CY15E064Q
64-Kbit (8K × 8) Serial (SPI) Automotive
F-RAM
64-Kbit (8K × 8) Serial (SPI) Automotive F-RAM
Features
■ 64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8K × 8
❐ High-endurance 10 trillion (1013) read/writes
❐ 121-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Very fast serial peripheral interface (SPI)
❐ Up to 16MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
■ Low power consumption
❐ 300 A active current at 1 MHz
❐ 10 A (typ) standby current at +85 C
■ Voltage operation: VDD = 4.5 V to 5.5 V
■ Automotive-E temperature: –40 C to +125 C
■ 8-pin small outline integrated circuit (SOIC) package
■ AEC Q100 Grade 1 compliant
■ Restriction of hazardous substances (RoHS) compliant
Functional Description
The CY15E064Q is a 64-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 121 years
while eliminating the complexities, overhead, and system level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the CY15E064Q performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The CY15E064Q is capable of supporting
1013 read/write cycles, or 10 million times more write cycles than
EEPROM.
These capabilities make the CY15E064Q ideal for nonvolatile
memory applications requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The CY15E064Q provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
CY15E064Q uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
specifications are guaranteed over an automotive-e temperature
range of –40 C to +125 C.
Logic Block Diagram
WP
CS
HOLD
SCK
SI
Instruction Decoder
Clock Generator
Control Logic
Write Protect
Instruction Register
Address Register
Counter
13
8Kx8
F-RAM Array
8
Data I/O Register
3
Nonvolatile Status
Register
SO
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-10028 Rev. *B
• San Jose, CA 95134-1709 • 408-943-2600
Revised April 12, 2017
