Click to expand full text
CY62126ESL MoBL®
1-Mbit (64 K × 16) Static RAM
1-Mbit (64 K × 16) Static RAM
Features
■ Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power
❐ Typical standby current: 1 A ❐ Maximum standby current: 4 A ■ Ultra low active power ❐ Typical active current: 1.3 mA at f = 1 MHz ■ Easy memory expansion with CE, and OE features ■ Automatic power down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Available in Pb-free 44-pin thin small outline package (TSOP) Type II package
Functional Description
The CY62126ESL is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current.
CY62126ESL Datasheet
