CY62126ESL Datasheet | Cypress

CY62126ESL Mo BL® 1-Mbit (64 K × 16) Static RAM 1-Mbit (64 K × 16) Static RAM Features - Very high speed: 45 ns - Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V - Ultra low standby power - Typical standby current: 1 A - Maximum standby current: 4 A - Ultra low active power - Typical active current: 1.3 m A at f = 1 MHz - Easy memory expansion with CE, and OE Features - Automatic power down when deselected - plementary metal oxide semiconductor (CMOS) for optimum speed and power - Available in Pb-free 44-pin thin small outline package (TSOP) Type II package Functional Description The CY62126ESL is a high performance CMOS static RAM organized as 64K words by 16 bits. This device Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (Mo BL) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are...