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CY621282BN - 1-Mbit (128K x 8) Static RAM

General Description

The CY621282BN is a high-performance CMOS static RAM organized as 128K words by 8 bits.

Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active HIGH Chip Enable (CE2), and active LOW Output Enable (OE).

Key Features

  • Temperature Ranges.
  • Automotive-E:.
  • 40 °C to 125 °C.
  • 4.5 V to 5.5 V operation.
  • Complementary metal oxide semiconductor (CMOS) for optimum speed/power.
  • Low active power 137.5 mW (max. ) (25 mA).
  • Low standby power 137.5 W (max. ) (25 A).
  • Automatic power-down when deselected.
  • TTL-compatible inputs and outputs.
  • Easy memory expansion with CE1, CE2, and OE options.
  • Available in Pb-free 32-pin (450 mil-wide) small outline integrated circuit (SOI.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY62128 128K x 8 Static RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY621282BN MoBL® Automotive 1-Mbit (128 K × 8) Static RAM 1-Mbit (128 K × 8) Static RAM Features ■ Temperature Ranges ❐ Automotive-E: –40 °C to 125 °C ■ 4.5 V to 5.5 V operation ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Low active power 137.5 mW (max.) (25 mA) ■ Low standby power 137.5 W (max.) (25 A) ■ Automatic power-down when deselected ■ TTL-compatible inputs and outputs ■ Easy memory expansion with CE1, CE2, and OE options ■ Available in Pb-free 32-pin (450 mil-wide) small outline integrated circuit (SOIC) package Functional Description The CY621282BN is a high-performance CMOS static RAM organized as 128K words by 8 bits.