900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Cypress Semiconductor Electronic Components Datasheet

CY62137VN Datasheet

2-Mbit (128K x 16) Static RAM

No Preview Available !

CY62137VN MoBL®
2-Mbit (128K x 16) Static RAM
Features
• Temperature Ranges
— Industrial: –40°C to 85°C
— Automotive-A: –40°C to 85°C
— Automotive-E: –40°C to 125°C
• High Speed: 55 ns
• Wide voltage range: 2.7V–3.6V
• Ultra-low active, standby power
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Available in Pb-free 44-pin TSOP Type II package
Functional Description[1]
The CY62137VN is a high-performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL®) in
portable applications such as cellular telephones. The device
also has an automatic power-down feature that reduces power
consumption by 99% when addresses are not toggling. The
device can also be put into standby mode when deselected
(CE HIGH) or when CE is LOW and both BLE and BHE are
HIGH. The input/output pins (I/O0 through I/O15) are placed in
a high-impedance state when: deselected (CE HIGH), outputs
are disabled (OE HIGH), BHE and BLE are disabled (BHE,
BLE HIGH), or during a write operation (CE LOW, and WE
LOW).Writing to the device is accomplished by taking Chip
Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low
Enable (BLE) is LOW, then data from I/O pins (I/O0 through
I/O7), is written into the location specified on the address pins
(A0 through A16). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8 through I/O15) is written into the location
specified on the address pins (A0 through A16).Reading from
the device is accomplished by taking Chip Enable (CE) and
Output Enable (OE) LOW while forcing the Write Enable (WE)
HIGH. If Byte Low Enable (BLE) is LOW, then data from the
memory location specified by the address pins will appear on
I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from
memory will appear on I/O8 to I/O15. See the truth table at the
back of this data sheet for a complete description of read and
write modes.
Logic Block Diagram
A1010
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DATA IN DRIVERS
128K x 16
RAM Array
I/O0–I/O7
I/O8–I/O15
COLUMN DECODER
Power-down
Circuit
CE
BHE
BLE
BHE
WE
CE
OE
BLE
Note:
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 001-06497 Rev. *A
Revised August 3, 2006
[+] FeedbackFree Datasheet http://www.Datasheet4U.com


Cypress Semiconductor Electronic Components Datasheet

CY62137VN Datasheet

2-Mbit (128K x 16) Static RAM

No Preview Available !

CY62137VN MoBL®
Product Portfolio
Product
CY62137VNLL Industrial
CY62137VNLL
CY62137VNLL Automotive-A
CY62137VNLL Automotive-E
Pin Configurations
Min.
2.7
VCC Range (V)
Typ.[3]
3.0
Max.
3.6
Speed
(ns)
55
70
70
70
Power Dissipation
Operating, ICC
(mA)
Typ.[3] Max.
Standby, ISB2
(µA)
Typ.[3] Max.
7 20 1 15
7 15 1 15
7 15 1 15
7 15 1 20
TSOP II (Forward)
Top View
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 A5
43 A6
42 A7
41 OE
40 BHE
39 BLE
38 I/O15
37 I/O14
36 I/O13
35 I/O12
34 VSS
33 VCC
32 I/O11
31 I/O10
30 I/O9
29 I/O8
28 NC
27 A8
26 A9
25 A10
24 A11
23 NC
Pin Definitions
Pin Number
Type
Description
1–5, 18–22, 24–27, 42–45 Input
7–10, 13–16, 29–32, 35–38 Input/Output
23 No Connect
A0–A16. Address Inputs
I/O0–I/O15. Data lines. Used as input or output lines depending on operation
NC. This pin is not connected to the die
17 Input/Control WE. When selected LOW, a WRITE is conducted. When selected HIGH, a READ is
conducted
6 Input/Control CE. When LOW, selects the chip. When HIGH, deselects the chip
40, 39
41
Input/Control
Input/Control
Byte Write Select Inputs, active LOW. BHE controls I/O15–I/O8, BLE controls
I/O7–I/O0.
OE. Output Enable. Controls the direction of the I/O pins. When LOW, the I/O pins
behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input
data pins
12, 34
Ground
VSS. Ground for the device
11, 33
Power Supply VCC. Power supply for the device
Notes:
2. NC pins are not connected on the die.
3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(TYP)., TA = 25°C.
Document #: 001-06497 Rev. *A
Page 2 of 11
[+] FeedbackFree Datasheet http://www.Datasheet4U.com


Part Number CY62137VN
Description 2-Mbit (128K x 16) Static RAM
Maker Cypress Semiconductor
Total Page 11 Pages
PDF Download

CY62137VN Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 CY62137V 2-Mbit (128K x 16) Static RAM
Cypress Semiconductor
2 CY62137VN 2-Mbit (128K x 16) Static RAM
Cypress Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy