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CY62137CV18 - 128K x 16 Static RAM

Datasheet Summary

Description

of read and write modes.

The CY62137CV18 is available in a 48-ball FBGA package.

The CY62137CV18 is a high-performance CMOS static RAM organized as 128K words by 16 bits.

Features

  • High Speed.
  • 55 ns and 70 ns availability.
  • Low voltage range:.
  • CY62137CV18: 1.65V.
  • 1.95V.
  • Pin Compatible w/ CY62137V18/BV18.
  • Ultra-low active power.
  • Typical Active Current: 0.5 mA @ f = 1 MHz.
  • Typical Active Current: 1.5 mA @ f = fmax (70 ns speed) Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power power consumption by 99% when addresses ar.

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Datasheet preview – CY62137CV18

Datasheet Details

Part number CY62137CV18
Manufacturer Cypress Semiconductor
File Size 213.92 KB
Description 128K x 16 Static RAM
Datasheet download datasheet CY62137CV18 Datasheet
Additional preview pages of the CY62137CV18 datasheet.

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Full PDF Text Transcription

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CY62137CV18 MoBL2™ 128K x 16 Static RAM Features • High Speed — 55 ns and 70 ns availability • Low voltage range: — CY62137CV18: 1.65V−1.95V • Pin Compatible w/ CY62137V18/BV18 • Ultra-low active power — Typical Active Current: 0.5 mA @ f = 1 MHz — Typical Active Current: 1.5 mA @ f = fmax (70 ns speed) Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH or both BLE and BHE are HIGH).
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