32k x 16 static ram.
* 5.0V operation (± 10%)
* High speed — tAA = 12 ns
* Low active power — 825 mW (max., 10 ns, “L” version)
* Very Low standby power — 500 µW (max., “L” ve.
of read and write modes. The input/output pins (I/O1 through I/O16) are placed in a high-impedance state when the device is deselected (CE LOW), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write opera.
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