CY7C1382BV25 Datasheet 512K x 36 / 1 Mb x 18 Pipelined SRAM

Manufacturer: Cypress (now Infineon)

CY7C1382BV25 512k x 36 / 1 mb x 18 pipelined sram by Cypress (now Infineon) - Datasheet Preview

Datasheet Details

Part number	CY7C1382BV25
Manufacturer	Cypress (now Infineon)
File Size	649.04 KB
Description	512K x 36 / 1 Mb x 18 Pipelined SRAM
Download	CY7C1382BV25 Download (PDF)

General Description

The Cypress Synchronous Burst SRAM family employs high-speed, low-power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology.

Each memory cell consists of six transistors.

The CY7C1382BV25 and CY7C1380BV25 SRAMs integrate 1,048,576x18

Overview

1CY7C1 380B V25 PRELIMINARY CY7C1380BV25 CY7C1382BV25 512K x 36 / 1 Mb x 18 Pipelined.

Key Features

Fast clock speed: 200,166, 150, 133 MHz.
Provide high-performance 3-1-1-1 access rate.
Fast OE access times: 3.0,3.2, 3.4, 3.8, 4.2 ns.
Optimal for depth expansion.
2.5V (±5%) Operation.
Common data inputs and data outputs.
Byte Write Enable and Global Write control.
Chip enable for address pipeline.
Address, data, and control registers.
Internally self-timed WRITE CYCLE.
Burst control pins (inter.

More Datasheets from Cypress (now Infineon)

Part Number	Description
CY7C1382C	18-Mb (512K x 36/1M x 18) Pipelined SRAM
CY7C1382CV25	(CY7C1380CV25 / CY7C1382CV25) 512K x 36/1M x 18 Pipelined SRAM
CY7C1382D	18-Mbit Pipelined SRAM
CY7C1382DV33	18-Mbit Pipelined SRAM
CY7C1382KV33	18-Mbit Pipelined SRAM
CY7C138	4K x 8/9 Dual-Port Static RAM
CY7C1380BV25	512K x 36 / 1 Mb x 18 Pipelined SRAM
CY7C1380C	18-Mb (512K x 36/1M x 18) Pipelined SRAM
CY7C1380CV25	(CY7C1380CV25 / CY7C1382CV25) 512K x 36/1M x 18 Pipelined SRAM
CY7C1380D	18-Mbit Pipelined SRAM