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CY7C1515V18

CY7C1515V18 is (CY7C15xxV18) SRAM 4-Word Burst Architecture manufactured by Cypress.
CY7C1515V18 datasheet preview

CY7C1515V18 Datasheet

Part number CY7C1515V18
Datasheet CY7C1515V18 / CY7C1511V18 Datasheet PDF (Download)
File Size 561.73 KB
Manufacturer Cypress
Description (CY7C15xxV18) SRAM 4-Word Burst Architecture
CY7C1515V18 page 2 CY7C1515V18 page 3

CY7C1515V18 Overview

QDR-II architecture consists of two separate ports to access the memory array. The Read port has dedicated Data Outputs to support Read operations and the Write Port has dedicated Data Inputs to support Write operations. QDR-II architecture has separate data inputs and data outputs to pletely eliminate the need to “turn-around” the data bus required with mon I/O devices.

CY7C1515V18 Key Features

  • Separate Independent Read and Write Data Ports
  • Supports concurrent transactions
  • 250-MHz Clock for High Bandwidth
  • 4-Word Burst for reducing address bus frequency
  • Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz
  • Two input clocks (K and K) for precise DDR timing
  • SRAM uses rising edges only
  • Two output clocks (C and C) accounts for clock skew and flight time mismatching
  • Echo clocks (CQ and CQ) simplify data capture in high speed systems
  • Single multiplexed address input bus latches address inputs for both Read and Write ports

Related Datasheets

Part Number Description Manufacturer
CY7C1515AV18 72-Mbit QDR-II SRAM 4-Word Burst Architecture Cypress Semiconductor
CY7C1515JV18 72-Mbit QDR-II SRAM 4-Word Burst Architecture Cypress Semiconductor
CY7C1515KV18 (CY7C15xxKV18) 72-Mbit QDR II SRAM 4-Word Burst Architecture Cypress Semiconductor

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