CY7C4275V
Key Features
- 3.3 V operation for low power consumption and easy integration into low voltage systems
- High speed, low power, first-in first-out (FIFO) memories
- 8K × 18 (CY7C4255V)
- 32K × 18 (CY7C4275V)
- 64K × 18 (CY7C4285V)
- 0.35 micron CMOS for optimum speed and power
- High speed 100 MHz operation (10 ns read/write cycle times)
- Low power ❐ ICC = 30 mA ❐ ISB = 4 mA
- Fully asynchronous and simultaneous read and write operation
- Empty, Full, Half Full, and programmable Almost Empty and Almost Full status flags
