CY7C4271V Overview
Key Features
- 3.3 V operation for low-power consumption and easy integration into low-voltage systems
- High-speed, low-power, first-in first-out (FIFO) memories
- 16 K × 9 (CY7C4261V)
- 32 K × 9 (CY7C4271V)
- 64 K × 9 (CY7C4281V)
- 128 K × 9 (CY7C4291V)
- 0.35-micron CMOS for optimum speed or power
- High-speed 100-MHz operation (10-ns read/write cycle times)
- Low power ❐ ICC = 25 mA ❐ ISB = 4 mA
- Fully asynchronous and simultaneous read and write operation
