• Part: CY7S1061G
  • Description: 16-Mbit (1 M words x 16 bit) Static RAM
  • Manufacturer: Cypress
  • Size: 900.77 KB
Download CY7S1061G Datasheet PDF
Cypress
CY7S1061G
CY7S1061G is 16-Mbit (1 M words x 16 bit) Static RAM manufactured by Cypress.
CY7S1061G/CY7S1061GE 16-Mbit (1 M words × 16 bit) Static RAM with Power Snooze™ and ECC 16-Mbit (1 M words × 16 bit) Static RAM with Power Snooze™ and Error Correcting Code (ECC) Features - High speed - t AA = 10 ns - Ultra-low power Power Snooze™[1] device - Deep Sleep (DS) current IDS = 22-µA maximum - Low active and standby currents - ICC = 90-m A typical - ISB2 = 20-m A typical - Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V - Embedded error-correcting code (ECC) for single-bit error correction - 1.0-V data retention - Transistor-transistor logic (TTL) patible inputs and outputs - Error indication (ERR) pin to indicate 1-bit error detection and correction - Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages Functional Description The CY7S1061G/CY7S1061GE is a high-performance CMOS fast static RAM organized as 1,048,576 words by 16 bits. This device Features fast access times (10 ns)...