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CY7S1061G - 16-Mbit (1 M words x 16 bit) Static RAM

Cypress Semiconductor

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Datasheet Details

Part number: CY7S1061G
Manufacturer: Cypress Semiconductor
File Size: 900.77 KB
Datasheet: CY7S1061G-CypressSemiconductor.pdf
Description: 16-Mbit (1 M words x 16 bit) Static RAM

CY7S1061G Product details

Description

The CY7S1061G/CY7S1061GE is a high-performance CMOS fast static RAM organized as 1,048,576 words by 16 bits..

Features

High speed.
tAA = 10 ns.
Ultra-low power PowerSnooze™[1] device.
Deep Sleep (DS) current IDS = 22-µA maximum.
Low active and standby currents.
ICC = 90-mA typical.
ISB2 = 20-mA typical.
Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
Embedded error-correcting code (ECC) for single-bit error correction.
1.0-V data retention.
Transistor-transistor logic (TTL) compatible inputs and outputs.
Error indicat.

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