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CY7S1061GE - 16-Mbit (1 M words x 16 bit) Static RAM

Download the CY7S1061GE datasheet PDF (CY7S1061G included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 16-mbit (1 m words x 16 bit) static ram.

Description

The CY7S1061G/CY7S1061GE is a high-performance CMOS fast static RAM organized as 1,048,576 words by 16 bits.

Features

  • High speed.
  • tAA = 10 ns.
  • Ultra-low power PowerSnooze™[1] device.
  • Deep Sleep (DS) current IDS = 22-µA maximum.
  • Low active and standby currents.
  • ICC = 90-mA typical.
  • ISB2 = 20-mA typical.
  • Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • 1.0-V data retention.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • Error indicat.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7S1061G-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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CY7S1061G/CY7S1061GE 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and ECC 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and Error Correcting Code (ECC) Features ■ High speed ❐ tAA = 10 ns ■ Ultra-low power PowerSnooze™[1] device ❐ Deep Sleep (DS) current IDS = 22-µA maximum ■ Low active and standby currents ❐ ICC = 90-mA typical ❐ ISB2 = 20-mA typical ■ Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V ■ Embedded error-correcting code (ECC) for single-bit error correction ■ 1.
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