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CY7S1061GE Datasheet 16-Mbit (1 M words x 16 bit) Static RAM

Manufacturer: Cypress (now Infineon)

Download the CY7S1061GE datasheet PDF. This datasheet also includes the CY7S1061G variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (CY7S1061G-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The CY7S1061G/CY7S1061GE is a high-performance CMOS fast static RAM organized as 1,048,576 words by 16 bits.

This device

Overview

CY7S1061G/CY7S1061GE 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and ECC 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and Error Correcting Code.

Key Features

  • High speed.
  • tAA = 10 ns.
  • Ultra-low power PowerSnooze™[1] device.
  • Deep Sleep (DS) current IDS = 22-µA maximum.
  • Low active and standby currents.
  • ICC = 90-mA typical.
  • ISB2 = 20-mA typical.
  • Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • 1.0-V data retention.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • Error indicat.

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