CY7S1061G Overview
The CY7S1061G/CY7S1061GE is a high-performance CMOS fast static RAM organized as 1,048,576 words by 16 bits.
CY7S1061G Key Features
- High speed
- tAA = 10 ns
- Ultra-low power PowerSnooze™[1] device
- Deep Sleep (DS) current IDS = 22-µA maximum
- Low active and standby currents
- ICC = 90-mA typical
- ISB2 = 20-mA typical
- Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V
- Embedded error-correcting code (ECC) for single-bit error correction
- 1.0-V data retention