GVT71256E18 - (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM

Cypress Semiconductor

GVT71256E18 Description

( DataSheet : www.DataSheet4U.com ) 325A CY7C1325A/GVT71256E18 256K x 18 Synchronous Flow-Through Burst SRAM .
The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal techno.

GVT71256E18 Features

* Fast access times: 7.5 and 8 ns Fast clock speed: 117 and 100 MHz Provide high-performance 2-1-1-1 access rate Fast OE access times: 4.0 ns

GVT71256E18 Applications

* Low profile 119-lead, 14-mm x 22-mm BGA (Ball Grid Array) and 100-pin TQFP packages The CY7C1325A/GVT71256E18 SRAM integrates 262,144x18 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlle

📥 Download Datasheet

GVT71256E18 Datasheet Preview — Preview of GVT71256E18 PDF

Datasheet Details

Part number: GVT71256E18
Manufacturer: Cypress Semiconductor
File Size: 685.75 KB
Datasheet: GVT71256E18_CypressSemiconductor.pdf
Description: (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM

📁 Related Datasheet

📌 All Tags

GVT71256E18 GVT7C1325A 256K Synchronous Flow Through Burst SRAM Cypress Semiconductor

Cypress Semiconductor GVT71256E18-like datasheet

GVT71256B36 - (GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM
GVT71256C36 - (GVT7xxxx) 256K X 36/512K X 18 Pipelined SRAM
GVT71256D36 - (GVT7xxxx) 256K x 36 / 512K x 18 Pipelined SRAM
GVT71256T18 - (GVT71256T18 / GVT7C1359A) 256K X 18 Synchronous-pipelined Cache Tag RAM
GVT71256ZB36 - (GVT7xxxx) 256K x 36 / 512K x 18 Flow Thru SRAM
GVT71256ZC36 - (GVT7xxxx) 256Kx36/512Kx18 Pipelined SRAM With Nobltm Architecture