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GVT71256E18 - (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM

Datasheet Summary

Description

The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.

Each memory cell consists of four transistors and two high-valued resistors.

Features

  • Fast access times: 7.5 and 8 ns Fast clock speed: 117 and 100 MHz Provide high-performance 2-1-1-1 access rate Fast OE access times: 4.0 ns 3.3V.
  • 5% and +10% power supply 2.5V or 3.3V I/O supply 5V tolerant inputs except I/Os Clamp diodes to VSSQ at all inputs and outputs Common data inputs and data outputs Byte Write Enable and G.

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Datasheet preview – GVT71256E18

Datasheet Details

Part number GVT71256E18
Manufacturer Cypress Semiconductor
File Size 685.75 KB
Description (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM
Datasheet download datasheet GVT71256E18 Datasheet
Additional preview pages of the GVT71256E18 datasheet.

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( DataSheet : www.DataSheet4U.com ) 325A CY7C1325A/GVT71256E18 256K x 18 Synchronous Flow-Through Burst SRAM Features • • • • • • • • • • • • • • • • Fast access times: 7.5 and 8 ns Fast clock speed: 117 and 100 MHz Provide high-performance 2-1-1-1 access rate Fast OE access times: 4.0 ns 3.3V –5% and +10% power supply 2.5V or 3.
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