• Part: GVT71256E18
  • Description: 256K x 18 Synchronous Flow Through Burst SRAM
  • Manufacturer: Cypress
  • Size: 685.75 KB
GVT71256E18 Datasheet (PDF) Download
Cypress
GVT71256E18

Key Features

  • All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK)
  • Asynchronous inputs include the Output Enable (OE) and Burst Mode Control (MODE), and Sleep Mode Control (ZZ)
  • The data outputs (DQ), enabled by OE, are also asynchronous
  • Addresses and chip enables are registered with either Address Status Processor (ADSP) or Address Status Controller (ADSC) input pins
  • Subsequent burst addresses can be internally generated as controlled by the Burst Advance pin (ADV)
  • Address, data inputs, and write controls are registered on-chip to initiate a self-timed Write cycle
  • Write cycles can be one to four bytes wide as controlled by the write control inputs
  • Individual byte write allows individual byte to be written
  • WEL controls DQ1-DQ8 and DQP1
  • WEH controls DQ9-DQ16 and DQP2