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HM628512

Manufacturer: Hitachi Semiconductor (now Renesas)

HM628512 datasheet by Hitachi Semiconductor (now Renesas).

HM628512 datasheet preview

HM628512 Datasheet Details

Part number HM628512
Datasheet HM628512_HitachiSemiconductor.pdf
File Size 85.93 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description 4 M SRAM (512-kword x 8-bit)
HM628512 page 2 HM628512 page 3

HM628512 Overview

The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high density mounting.

HM628512 Key Features

  • Single 5 V supply
  • Access time: 55/70 ns (max)
  • Power dissipation  Active: 50 mW/MHz (typ)  Standby: 10 µW (typ)
  • pletely static memory. No clock or timing strobe required
  • Equal access and cycle times
  • mon data input and output: Three state output
  • Directly TTL patible: All inputs and outputs
  • Battery backup operation
Hitachi Semiconductor (now Renesas) logo - Manufacturer

More Datasheets from Hitachi Semiconductor (now Renesas)

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Part Number Description
HM628512A 4M SRAM (512 KWORD X 8 BIT)
HM628512AI 524288 x 8-Bit High Speed CMOS SRAM
HM628512B 4 M SRAM (512-kword x 8-bit)
HM628512BFP 4 M SRAM (512-kword x 8-bit)
HM628512BI 4 M SRAM (512-kword x 8-bit)
HM628512C 4 M SRAM (512-kword x 8-bit)
HM628512CI Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)
HM628511H 4M High Speed SRAM (512-kword x 8-bit)
HM628511HC 4M High Speed SRAM (512-kword x 8-bit)
HM628511HI 4M High Speed SRAM (512-kword x 8-bit)

HM628512 Distributor

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