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HM628512 - 4 M SRAM (512-kword x 8-bit)

General Description

The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit.

It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology.

Key Features

  • Single 5 V supply.
  • Access time: 55/70 ns (max).
  • Power dissipation  Active: 50 mW/MHz (typ)  Standby: 10 µW (typ).
  • Completely static memory. No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output: Three state output.
  • Directly TTL compatible: All inputs and outputs.
  • Battery backup operation HM628512B Series Ordering Information Type No. HM628512BLP-5 HM628512BLP-7 HM628512BLP-5SL HM6.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HM628512A 4M SRAM (512 KWORD X 8 BIT)
HM628512AI 524288 x 8-Bit High Speed CMOS SRAM
HM628512B 4 M SRAM (512-kword x 8-bit)
HM628512BFP 4 M SRAM (512-kword x 8-bit)
HM628512BI 4 M SRAM (512-kword x 8-bit)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM628512B Series 4 M SRAM (512-kword × 8-bit) ADE-203-903D (Z) Rev. 3.0 Aug. 24, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is available for high density mounting. The HM628512B is suitable for battery backup system. Features • Single 5 V supply • Access time: 55/70 ns (max) • Power dissipation  Active: 50 mW/MHz (typ)  Standby: 10 µW (typ) • Completely static memory.