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HM628512BI Datasheet 4 M Sram (512-kword X 8-bit)

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HM628512BI Series 4 M SRAM (512-kword × 8-bit) ADE-203-935C (Z) Rev. 2.0 Aug.

General Description

The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit.

HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology.

The HM628512BI Series offers low power standby power dissipation;

Key Features

  • Single 5 V supply.
  • Access time: 70/85 ns (max).
  • Power dissipation  Active: 50 mW/MHz (typ)  Standby: 10 µW (typ).
  • Completely static memory. No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output: Three state output.
  • Directly TTL compatible: All inputs and outputs.
  • Battery backup operation.
  • Operating temperature:.
  • 40 to +85˚C HM628512BI Series Ordering Information T.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
HM628512B 4 M SRAM (512-kword x 8-bit)
HM628512BFP 4 M SRAM (512-kword x 8-bit)
HM628512 4 M SRAM (512-kword x 8-bit)
HM628512A 4M SRAM (512 KWORD X 8 BIT)
HM628512AI 524288 x 8-Bit High Speed CMOS SRAM
HM628512C 4 M SRAM (512-kword x 8-bit)
HM628512CI Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)
HM628511H 4M High Speed SRAM (512-kword x 8-bit)
HM628511HC 4M High Speed SRAM (512-kword x 8-bit)
HM628511HI 4M High Speed SRAM (512-kword x 8-bit)

HM628512BI Distributor