GVT71512B18 - 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM

Product Overview

Cypress Semiconductor

Datasheet Details

Part number	GVT71512B18
Manufacturer	Cypress Semiconductor
File Size	791.54 KB
Description	256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM
Datasheet	GVT71512B18 Datasheet
Note	This datasheet PDF includes multiple part numbers: GVT71512B18, GVT71256B36. Please refer to the document for exact specifications by model.
Additional preview pages of the GVT71512B18 datasheet.

Product details

Description

The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.

Features

Fast access times: 6.0, 6.5, 7.0, and 8.0 ns Fast clock speed: 150, 133, 117, and 100 MHz 1 ns set-up time and hold time Fast OE access times: 3.5 ns and 4.0 ns 3.3V.
5% and +10% power supply 3.3V or 2.5V I/O supply 5V tolerant inputs except I/Os Clamp diodes to VSS at all inputs and outputs Common data inputs and data outputs Byte Write Enable and Global Write control Multiple c.

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GVT71512C18 - 256K X 36/512K X 18 Pipelined SRAM
GVT71512D18 - 256K x 36 / 512K x 18 Pipelined SRAM
GVT71512ZB18 - 256K x 36 / 512K x 18 Flow Thru SRAM
GVT71512ZC18 - 256Kx36/512Kx18 Pipelined SRAM
GVT71256B36 - (GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM
GVT71256C36 - (GVT7xxxx) 256K X 36/512K X 18 Pipelined SRAM

Published: Apr 13, 2006 |