Datasheet Details
| Part number | GVT71512B18 |
|---|---|
| Manufacturer | Cypress (Infineon) |
| File Size | 791.54 KB |
| Description | 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM |
| Datasheet |
 GVT71512B18 Datasheet
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Description
The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.
Each memory cell consists of four transistors and two high-valued resistors.
Features
- Fast access times: 6.0, 6.5, 7.0, and 8.0 ns Fast clock speed: 150, 133, 117, and 100 MHz 1 ns set-up time and hold time Fast OE access times: 3.5 ns and 4.0 ns 3.3V.
- 5% and +10% power supply 3.3V or 2.5V I/O supply 5V tolerant inputs except I/Os Clamp diodes to VSS at all inputs and outputs Common data inputs and data outputs Byte Write Enable and Global Write control Multiple c.