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S29GL512S - 3.0V GL-S Flash Memory

Download the S29GL512S datasheet PDF (S29GL01GS included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 3.0v gl-s flash memory.

Description

The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology.

These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns.

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Note: The manufacturer provides a single datasheet file (S29GL01GS-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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S29GL01GS, S29GL512S S29GL256S, S29GL128S 1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte), 256 Mbit (32 Mbyte), 128 Mbit (16 Mbyte), 3.0V GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption. Distinctive Characteristics  CMOS 3.
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