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S29GL512T - MirrorBit Eclipse Flash Memory

Download the S29GL512T datasheet PDF (S29GL01GT included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for mirrorbit eclipse flash memory.

Description

The Cypress S29GL01GT/512T are MirrorBit® Eclipse™ flash products fabricated on 45 nm process technology.

These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S29GL01GT-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by Cypress Semiconductor

Full PDF Text Transcription

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S29GL01GT/S29GL512T 1-Gb (128 MB)/512-Mb (64 MB), GL-T MirrorBit® Eclipse™ Flash General Description The Cypress S29GL01GT/512T are MirrorBit® Eclipse™ flash products fabricated on 45 nm process technology. These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance, and lower power consumption. Distinctive Characteristics ■ 45 nm MirrorBit Eclipse Technology ■ Single supply (VCC) for read / program / erase (2.7 V to 3.
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