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S34ML16G2 - NAND Flash

Description

Cypress S34ML16G2 16-Gb NAND is offered in 3.3 VCC with ×8 I/O interface.

This document contains information for the S34ML16G2 device, which is a quad-die stack of four S34ML04G2 die.

data sheet: S34ML01G2_04G2.

Features

  • Supports Multiplane Program and Erase commands.
  • Supports Copy Back Program.
  • Supports Multiplane Copy Back Program.
  • Supports Read Cache.
  • Electronic Signature.
  • Manufacturer ID: 01h.
  • Operating Temperature.
  • Industrial: 40 °C to 85 °C Performance.
  • Page Read / Program.
  • Random access: 30 µs (Max).
  • Sequential access: 25 ns (Min).
  • Program time / Multiplane Program time: 300 µs (Typ).
  • Block Erase / Mult.

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Full PDF Text Transcription

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S34ML16G2 16-Gbit, 4-Bit ECC, ×8 I/O, 3 V VCC NAND Flash for Embedded General Description Cypress S34ML16G2 16-Gb NAND is offered in 3.3 VCC with ×8 I/O interface. This document contains information for the S34ML16G2 device, which is a quad-die stack of four S34ML04G2 die. For detailed specifications, please refer to the discrete die data sheet: S34ML01G2_04G2. Distinctive Characteristics  Density – 16-Gb (4-Gb  4)  Architecture (For each 4-Gb device) – Input / Output Bus Width: 8-bits – Page Size: (2048 + 128) bytes; 128-byte spare area – Block Size: 64 Pages or (128k + 8k) bytes – Plane Size – 2048 Blocks per Plane or (256M + 16M) bytes – Device Size – 2 Planes per Device or 512 Mbyte  NAND Flash Interface – Open NAND Flash Interface (ONFI) 1.
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