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MTA090P02J3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast switching Characteristic.
  • Pb-free lead plating and halogen-free package BVDSS ID @ VGS=-4.5V RDS(ON)@VGS= -4.5V, ID= -6A RDS(ON)@VGS= -2.5V, ID= -3A -20V -10A 78mΩ (typ) 120mΩ (typ) Symbol MTA090P02J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G D S Ordering Information Device MTA090P02J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environmen.

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Datasheet Details

Part number MTA090P02J3
Manufacturer Cystech Electonics
File Size 369.46 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA090P02J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C322J3 Issued Date : 2014.03.27 Revised Date : Page No. : 1/9 MTA090P02J3 Features • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID @ VGS=-4.5V RDS(ON)@VGS= -4.5V, ID= -6A RDS(ON)@VGS= -2.