• Part: MTA012A02CDV8
  • Description: Common Drain Dual N-Channel Enhancement Mode MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 389.42 KB
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Datasheet Summary

CYStech Electronics Corp. Spec. No. : C779V8 Issued Date : 2016.12.19 Revised Date : Page No. : 1/9 mon Drain Dual N -Channel Enhancement Mode MOSFET MTA012A02CDV8 BVDSS ID VGS=4.5V, TA=25°C VGS=4.5V, ID=5A RDSON (TYP.) VGS=2.5V, ID=2.6A Features VGS=1.8V, ID=1A - Simple drive requirement - Low gate charge - Low on-resistance - Fast switching speed - ESD protected gate - Pb-free lead plating and halogen-free package 20V 9A 12.0 mΩ 16.2 mΩ 32.1 mΩ Equivalent Circuit Outline Pin 1 DFN3×3 G:Gate S:Source D:Drain Ordering Information Device MTA012A02CDV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape &...