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MTA025B01V8 - Dual P-Channel Enhancement Mode MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package P-CH -14V -5.0A -7.1A 22.8mΩ 30.7mΩ 49.0mΩ Equivalent Circuit MTA025B01V8 Outline DFN3×3 G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTA025B01V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS complian.

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Datasheet Details

Part number MTA025B01V8
Manufacturer Cystech Electonics
File Size 480.03 KB
Description Dual P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTA025B01V8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C089V8 Issued Date : 2016.03.18 Revised Date : Page No. : 1/9 Dual P-Channel Enhancement Mode MOSFET MTA025B01V8 BVDSS ID@VGS=-4.5V, TA=25°C ID@VGS=-4.5V, TC=25°C VGS=-4.5V, ID=-4.5A RDSON(TYP) VGS=-2.5V, ID=-2.2A VGS=-1.8V, ID=-2.2A Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package P-CH -14V -5.0A -7.1A 22.8mΩ 30.7mΩ 49.