Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C089N3 Issued Date : 2015.11.09
Revised Date : Page No. : 1/9
-14V P-Channel Enhancement Mode MOSFET
MTA025P01SN3 BVDSS ID @ VGS=-4.5V, TA=25°C
RDSON@VGS=-4.5V, ID=-4A
RDSON@VGS=-2.5V,ID=-4A
RDSON@VGS=-1.8V,ID=-2A Features
- Low gate charge
- pact and low profile SOT-23 package
- Advanced trench process technology
- High density cell design for ultra low on resistance
- Pb-free lead plating package
-14V -5.6A
25.5mΩ(typ) 35.5mΩ(typ) 52.0mΩ(typ)
Symbol
Outline
SOT-23 D
G：Gate S：Source D：Drain
Ordering Information
Device MTA025P01SN3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs /...