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MTA025P01SN3 - P-Channel Enhancement Mode MOSFET

Key Features

  • Low gate charge.
  • Compact and low profile SOT-23 package.
  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • Pb-free lead plating package -14V -5.6A 25.5mΩ(typ) 35.5mΩ(typ) 52.0mΩ(typ) Symbol MTA025P01SN3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTA025P01SN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment f.

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Datasheet Details

Part number MTA025P01SN3
Manufacturer Cystech Electonics
File Size 415.85 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTA025P01SN3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C089N3 Issued Date : 2015.11.09 Revised Date : Page No. : 1/9 -14V P-Channel Enhancement Mode MOSFET MTA025P01SN3 BVDSS ID @ VGS=-4.5V, TA=25°C RDSON@VGS=-4.5V, ID=-4A RDSON@VGS=-2.5V,ID=-4A RDSON@VGS=-1.8V,ID=-2A Features • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • Pb-free lead plating package -14V -5.6A 25.5mΩ(typ) 35.5mΩ(typ) 52.