Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C089N6 Issued Date : 2015.11.23 Revised Date : 2016.03.18 Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
BVDSS ID@VGS=-4.5V, TC=25°C
ID@VGS=-4.5V, TA=25°C
VGS=-4.5V, ID=-4.5A
RDSON(TYP) VGS=-2.5V, ID=-2.2A
VGS=-1.8V, ID=-2.2A
-14V -7.1A -6.0A 22.5mΩ 30.3mΩ 49.0mΩ
Features
- Simple drive requirement
- Low on-resistance
- Small package outline
- Pb-free lead plating and halogen-free package
Equivalent Circuit
G：Gate S：Source...