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MTA025P01N6 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Small package outline.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTA025P01N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-4.5V Continuous Drain Current TC=70 °C, VGS=-4.5V TA=25 °C, VGS=-4.5V (Note 1) TA=70 °C, VGS=-4.5V (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70.

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Datasheet Details

Part number MTA025P01N6
Manufacturer Cystech Electonics
File Size 400.50 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA025P01N6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C089N6 Issued Date : 2015.11.23 Revised Date : 2016.03.18 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTA025P01N6 BVDSS ID@VGS=-4.5V, TC=25°C ID@VGS=-4.5V, TA=25°C VGS=-4.5V, ID=-4.5A RDSON(TYP) VGS=-2.5V, ID=-2.2A VGS=-1.8V, ID=-2.2A -14V -7.1A -6.0A 22.5mΩ 30.3mΩ 49.0mΩ Features • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package Equivalent Circuit MTA025P01N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-4.5V Continuous Drain Current TC=70 °C, VGS=-4.5V TA=25 °C, VGS=-4.5V (Note 1) TA=70 °C, VGS=-4.