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MTA17A02CDN6 - Dual N-Channel Enhancement Mode MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Small package outline.
  • Pb-free lead plating and halogen-free package RDSON (TYP. ) VGS=4.5V VGS=4.5V, ID=6A VGS=4.0V, ID=6A VGS=3.0V, ID=6A VGS=2.5V, ID=6A 20V 6A 16.1mΩ 16.7mΩ 18.4 mΩ 20.2 mΩ Equivalent Circuit MTA17A02CDN6 G：Gate S：Source D：Drain Ordering Information Device MTA17A02CDN6-0-T1-G Package SOT-26 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly.

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Datasheet Details

Part number MTA17A02CDN6
Manufacturer Cystech Electonics
File Size 357.84 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTA17A02CDN6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Dual N-Channel Enhancement Mode MOSFET Spec. No. : C930N6 Issued Date : 2013.11.06 Revised Date : Page No. : 1/8 MTA17A02CDN6 BVDSS ID Features • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package RDSON (TYP.) VGS=4.5V VGS=4.5V, ID=6A VGS=4.0V, ID=6A VGS=3.0V, ID=6A VGS=2.5V, ID=6A 20V 6A 16.1mΩ 16.7mΩ 18.4 mΩ 20.