Datasheet4U Logo Datasheet4U.com

MTA25N02J3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating package BVDSS ID VGS=10V, ID=12A RDSON(TYP) VGS=4.5V, ID=6A VGS=2.5V, ID=2A 20V 22A 16mΩ 18mΩ 32mΩ Equivalent Circuit MTA25N02J3 Outline TO-252(DPAK) G G:Gate S:Source D:Drain D S Ordering Information Device MTA25N02J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS complian.

📥 Download Datasheet

Datasheet Details

Part number MTA25N02J3
Manufacturer Cystech Electonics
File Size 261.97 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA25N02J3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET Spec. No. : C413J3 Issued Date : 2012.08.01 Revised Date : 2013.12.26 Page No. : 1/9 MTA25N02J3 Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package BVDSS ID VGS=10V, ID=12A RDSON(TYP) VGS=4.5V, ID=6A VGS=2.