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Cystech Electonics
Cystech Electonics

MTA340N02N3 Datasheet Preview

MTA340N02N3 Datasheet

20V N-Channel Enhancement Mode MOSFET

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MTA340N02N3 pdf
CYStech Electronics Corp.
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date :
Page No. : 1/8
20V N-Channel Enhancement Mode MOSFET
MTA340N02N3
BVDSS
ID
RDSON@VGS=4.5V, ID=650mA
RDSON@VGS=2.5V,ID=500mA
RDSON@VGS=1.8V,ID=200mA
20V
820mA
299mΩ(typ)
541mΩ(typ)
1.05Ω (typ)
Features
Simple drive requirement
Small package outline
Pb-free lead plating and halogen-free package
Symbol
MTA340N02N3
Outline
SOT-23
D
GGate
SSource
DDrain
GS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C , VGS=4.5V
Continuous Drain Current @ TA=70°C, VGS=4.5V
Pulsed Drain Current (Notes 1, 2)
Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width300μs, duty cycle2%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t10s.
4. Surface mounted on FR-4 board of minimum pad size.
5. Human body model, 1.5kΩ in series with 100pF.
Symbol
VDS
VGS
ID
IDM
PD
VESD
Tj, Tstg
MTA340N02N3
Limits
20
±12
820 (Note 4)
656 (Note 4)
3.3
1.38 (Note 3)
0.35 (Note 4)
1400 (Note 5)
-55~+150
Unit
V
mA
A
W
V
°C
CYStek Product Specification



Cystech Electonics
Cystech Electonics

MTA340N02N3 Datasheet Preview

MTA340N02N3 Datasheet

20V N-Channel Enhancement Mode MOSFET

No Preview Available !

MTA340N02N3 pdf
CYStech Electronics Corp.
Spec. No. : C915N3
Issued Date : 2013.10.08
Revised Date :
Page No. : 2/8
Thermal Performance
Parameter
Symbol
Limit
Thermal Resistance, Junction-to-Ambient, max
Rth,ja
90
Thermal Resistance, Junction-to-Case, max
RθJC
80
Note : Surface mounted on 1 in² copper pad of FR-4 board, 357°C/W when mounted on minimum copper pad.
Unit
°C/W
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
20 - - V VGS=0, ID=250μA
0.45 0.66
1.0
V VDS=VGS, ID=250μA
- - ±10
VGS=±12V, VDS=0
- - 1 μA VDS=16V, VGS=0
- - 10
VDS=16V, VGS=0 (Tj=70°C)
-
-
299
541
390
705
mΩ
VGS=4.5V, ID=650mA
VGS=2.5V, ID=500mA
- 1.05 1.5 Ω VGS=1.8V, ID=200mA
- 870 - mS VDS=10V, ID=400mA
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
- 35 -
- 11 -
-9-
-7-
- 21 -
- 25 -
- 47 -
-1-
- 0.05 -
- 0.4 -
pF VDS=15V, VGS=0, f=1MHz
ns
VDS=15V, ID=500mA, VGS=4.5V,
RG=6Ω
nC VDS=15V, ID=500mA, VGS=4.5V
Source-Drain Diode
*VSD
-
0.78 1.0
V VGS=0V, IS=150mA
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
MTA340N02N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTA340N02N3
CYStek Product Specification


Part Number MTA340N02N3
Description 20V N-Channel Enhancement Mode MOSFET
Maker Cystech Electonics
Total Page 8 Pages
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MTA340N02N3 pdf
MTA340N02N3 Datasheet PDF
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