MTB013N10RJ3 - N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Datasheet Details

Part number	MTB013N10RJ3
Manufacturer	Cystech Electonics
File Size	363.80 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB013N10RJ3-CystechElectonics.pdf

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=4.5V, ID=10A 100V 42A 9A 12.5mΩ(typ) 14.5 mΩ(typ) Symbol MTB013N10RJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB013N10RJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free p.

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Published: Dec 4, 2016 |