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Cystech Electonics

MTB013N10RJ3 Datasheet Preview

MTB013N10RJ3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB013N10RJ3
Spec. No. : C056J3
Issued Date : 2016.11.02
Revised Date :
Page No. : 1/ 9
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=15A
RDS(ON)@VGS=4.5V, ID=10A
100V
42A
9A
12.5mΩ(typ)
14.5 mΩ(typ)
Symbol
MTB013N10RJ3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
MTB013N10RJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB013N10RJ3
CYStek Product Specification




Cystech Electonics

MTB013N10RJ3 Datasheet Preview

MTB013N10RJ3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C056J3
Issued Date : 2016.11.02
Revised Date :
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current @ VGS=10V
Avalanche Current @L=0.1mH
Single Pulse Avalanche Energy @ L=0.5mH, ID=33 Amps,
VDD=50V
TC=25°C
Power Dissipation
TC=100°C
TA=25°C
TA=70°C
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
(Note 1)
(Note 1)
(Note 4)
(Note 4)
(Note 3)
(Note 5)
(Note 5)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
Limits
100
±20
42
29.7
9
7.2
168
42
272
60
30
2.5
1.6
-55~+175
Unit
V
A
mJ
W
°C/W
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC 2.5
Thermal Resistance, Junction-to-ambient, max (Note2)
Thermal Resistance, Junction-to-ambient, max (Note4)
RθJA
50 °C/W
110
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. When mounted on the minimum pad size recommended (PCB mount), t10s.
5. 100% tested by condition of VDD=25V, ID=10A, L=2mH, VGS=10V.
MTB013N10RJ3
CYStek Product Specification


Part Number MTB013N10RJ3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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