Datasheet4U Logo Datasheet4U.com

MTB032P06AV8 - P-Channel Enhancement Mode MOSFET

Description

The MTB032P06AV8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTB032P06AV8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device MTB032P06AV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec.

📥 Download Datasheet

Datasheet Details

Part number MTB032P06AV8
Manufacturer Cystech Electonics
File Size 405.41 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTB032P06AV8 Datasheet

📁 Similar Datasheet

  • MTB032P06V8 - P-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTB030N04N3 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTB030N10RE3 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTB030P06KH8 - P-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTB035N10KRJ3 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTB03N03H8 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTB001 - High Output Interface Driver ICs (Shindengen Electric)
  • MTB001D01-1 - LCD Module (CSOT)
  • MTB010A03H8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
  • MTB010A06RH8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
Other Datasheets by Cystech Electonics

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. Spec. No. : C924V8 Issued Date : 2015.10.26 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB032P06AV8 BVDSS ID@VGS=-10V, TC=25°C RDSON@VGS=10V, ID=-6A RDSON@VGS=-4.5V, ID=-4A Description -60V -25A 30mΩ(typ) 35mΩ(typ) The MTB032P06AV8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Published: |