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Cystech Electonics

MTB032P06AV8 Datasheet Preview

MTB032P06AV8 Datasheet

P-Channel Enhancement Mode MOSFET

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CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2015.10.26
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB032P06AV8 BVDSS
ID@VGS=-10V, TC=25°C
RDSON@VGS=10V, ID=-6A
RDSON@VGS=-4.5V, ID=-4A
Description
-60V
-25A
30mΩ(typ)
35mΩ(typ)
The MTB032P06AV8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB032P06AV8
Outline
Pin 1
DFN3×3
GGate SSource DDrain
Ordering Information
Device
MTB032P06AV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB032P06AV8
CYStek Product Specification




Cystech Electonics

MTB032P06AV8 Datasheet Preview

MTB032P06AV8 Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2015.10.26
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V
Continuous Drain Current @ TC=100°C, VGS=-10V
Continuous Drain Current @ TA=25°C, VGS=-10V
Continuous Drain Current @ TA=70°C, VGS=-10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TC=25
Total Power Dissipation
TC=100
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
-60
±25
-25
-16
-6.6
-5.3
-40 *1
-10
5
2.5 *2
36
14
2.5 *3
1.6 *3
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
3.5
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t10s ; 125°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON) *1
GFS *1
-60
-0.8
-
-
-
-2.5
V
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
-
-
±100
nA VGS=±25V, VDS=0V
-
-
-
-
-1
-25
μA
VDS=-48V, VGS=0V
VDS=-48V, VGS=0V, Tj=125°C
-
-
30
35
39
46
mΩ
VGS=-10V, ID=-6A
VGS=-4.5V ID=-4A
- 18 - S VDS=-5V, ID=-6A
Dynamic
Ciss
Coss
Crss
- 2827 -
- 109 -
- 70 -
pF VDS=-30V, VGS=0V, f=1MHz
MTB032P06AV8
CYStek Product Specification


Part Number MTB032P06AV8
Description P-Channel Enhancement Mode MOSFET
Maker Cystech Electonics
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