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Cystech Electonics

MTB06N03J3 Datasheet Preview

MTB06N03J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh4e4e1Jt43U.com
Issued Date : 2009.03.02
Revised Date :
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTB06N03J3
BVDSS
ID
RDS(ON)
30V
80A
6mΩ
Features
100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package & Halogen-free package
Symbol
MTB06N03J3
Outline
TO-252
GGate
DDrain
SSource
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
Total Power Dissipation @ TC=25
Total Power Dissipation @ TC=100
Operating Junction and Storage Temperature Range
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
MTB06N03J3
Limits
30
±20
80
50
170
53
140
40
83
45
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification




Cystech Electonics

MTB06N03J3 Datasheet Preview

MTB06N03J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh4e4e1Jt43U.com
Issued Date : 2009.03.02
Revised Date :
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.8
75
Unit
°C/W
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*ID(ON)
*RDS(ON)
*GFS
Dynamic
*Qg(VGS=10V)
*Qg(VGS=5V)
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
30
1
-
-
-
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode
*IS
*ISM
*VSD
-
-
-
*trr -
*Qrr -
-
1.5
-
-
-
-
5.3
7.6
25
53
30
8
17
22
16
65
10
4753
495
348
1.2
-
-
-
32
12
-
3
±100
1
25
-
6
9.5
-
-
-
-
-
-
-
-
-
-
-
-
-
80
170
1.3
-
-
V VGS=0V, ID=250μA
V VDS = VGS, ID=250μA
nA VGS=±20, VDS=0V
μA
VDS =24V, VGS =0V
VDS =20V, VGS =0V, Tj=125°C
A VDS =10V, VGS =10V
mΩ
VGS =10V, ID=30A
VGS =5V, ID=24A
S VDS =5V, ID=24A
nC ID=30A, VDS=15V, VGS=10V
ns
VDS=15V, ID=25A, VGS=10V,
RGS=2.7Ω
pF VGS=0V, VDS=15V, f=1MHz
Ω VGS=15mV, VDS=0V, f=1MHz
A
V IF=IS, VGS=0V
ns
nC
IF=IS, VGS=0, dIF/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
MTB06N03J3
Package
TO-252
(RoHS compliant & Halogen-free)
MTB06N03J3
Shipping
2500 pcs / Tape & Reel
Marking
B06N03
CYStek Product Specification


Part Number MTB06N03J3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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