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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
www.DataSheet4U.com Spec. No. : C441J3 Issued Date : 2009.03.02 Revised Date : Page No. : 1/7
MTB06N03J3
Features
BVDSS ID RDS(ON)
30V 80A 6mΩ
• 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package & Halogen-free package
Symbol
MTB06N03J3
Outline
TO-252
G：Gate D：Drain S：Source
G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.
MTB06N03J3 Datasheet
