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Cystech Electonics

MTB06N03Q8 Datasheet Preview

MTB06N03Q8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C441Q8
Issued Date : 2009.05.07
Revised Date : 2020.01.13
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB06N03Q8
BVDSS
ID@VGS=10V, TC=25C
RDSON@VGS=10V, ID=18A
RDSON@VGS=4.5V, ID=12A
30V
23A
4.6mΩ(typ)
6.5mΩ(typ)
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free lead plating package
Symbol
MTB06N03Q8
Outline
D
D
SOP-8
D
D
GGate DDrain SSource
Pin 1
G
S
S
S
Ordering Information
Device
Package
MTB06N03Q8-0-T3-G
SOP-8
(Pb-free lead plating and halogen-free package)
MTB06N03Q8-0-TF-G
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs/ Tape & Reel
4000 pcs/ Tape & Reel
MTB06N03Q8
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13reel, TF : 4000 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
CYStek Product Specification




Cystech Electonics

MTB06N03Q8 Datasheet Preview

MTB06N03Q8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C441Q8
Issued Date : 2009.05.07
Revised Date : 2020.01.13
Page No. : 2/9
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25C
Continuous Drain Current @VGS=10V,TC=100C
Continuous Drain Current @VGS=10V,TA=25C
Continuous Drain Current @VGS=10V,TA=100C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=16A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25
TA=100
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
30
±20
23
14
16
10
92 *1
16
12.8
3 *2
2.5
1.5
-55~+150
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
25
50 *3
C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in²copper pad of FR-4 board, 125C/W when mounted on minimum copper pad
Characteristics (TC=25C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
30
1.0
-
-
-
-
-
-
-
-
-
-
-
20
-
-
-
4.6
6.5
2796
308
268
-
3.0
-
±100
1
25
6
8.5
-
-
-
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S VDS =5V, ID=18A
nA VGS=±20V
μA VDS =24V, VGS =0V
VDS =20V, VGS =0V, Tj=125C
mΩ
VGS =10V, ID=18A
VGS =4.5V, ID=12A
pF VGS=0V, VDS=15V, f=1MHz
MTB06N03Q8
CYStek Product Specification


Part Number MTB06N03Q8
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Maker Cystech Electonics
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