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MTB09N06FP N-Channel Enhancement Mode Power MOSFET

MTB09N06FP Description

CYStech Electronics Corp.Spec.No.: C912FP Issued Date : 2016.02.19 Revised Date : Page No.: 1/8 N-Channel Enhancement Mode Power MOSFET MTB09N06.

MTB09N06FP Features

* Low Gate Charge
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* RoHS compliant package RDSON(TYP) @ VGS=4.5V, ID=20A 60V 60A 11A 6.4mΩ 7.8mΩ Symbol MTB09N06FP Outline TO-220FP G：Gate D：Drain S：Source GDS Order

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Datasheet Details

Part number
MTB09N06FP
Manufacturer
Cystech Electonics
File Size
357.99 KB
Datasheet
MTB09N06FP-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTB09N06FP-like datasheet