MTB09N06FP Description
CYStech Electronics Corp. 2016.02.19 Revised Date : 1/8 N-Channel Enhancement Mode Power MOSFET MTB09N06FP BVDSS ID @ VGS=10V, TC=25°C ID @ VGS=10V, TA=25°C RDSON(TYP) @ VGS=10V, ID=30A.
MTB09N06FP Key Features
- Low Gate Charge
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- RoHS pliant package