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Cystech Electonics

MTB09N06FP Datasheet Preview

MTB09N06FP Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C912FP
Issued Date : 2016.02.19
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB09N06FP BVDSS
ID @ VGS=10V, TC=25°C
ID @ VGS=10V, TA=25°C
RDSON(TYP) @ VGS=10V, ID=30A
Features
Low Gate Charge
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package
RDSON(TYP) @ VGS=4.5V, ID=20A
60V
60A
11A
6.4mΩ
7.8mΩ
Symbol
MTB09N06FP
Outline
TO-220FP
GGate
DDrain
SSource
GDS
Ordering Information
Device
MTB09N06FP-0-UB-S
Package
TO-220FP
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB09N06FP
CYStek Product Specification




Cystech Electonics

MTB09N06FP Datasheet Preview

MTB09N06FP Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C912FP
Issued Date : 2016.02.19
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V(silicon limit)
Continuous Drain Current @ TC=25°C, VGS=10V(package limit)
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current
(Note 5)
(Note 5)
(Note 5)
(Note 4)
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
Avalanche Current
Avalanche Energy @ L=1mH, ID=30A, VDD=30V
Repetitive Avalanche Energy@ L=0.1mH
Power Dissipation
TC=25°C
TC=100°C
Power Dissipation
TA=25°C
TA=70°C
(Note 2)
(Note 2)
(Note 6)
(Note 6)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
IDSM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
60
±30
62
60
43.8
240
11
8.8
30
450
6
68
34
2
1.3
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t10s (Note 1)
Thermal Resistance, Junction-to-ambient, max
(Note 1)
Symbol
RθJC
RθJA
Value
2.2
15
62.5
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. Pulse width 300μs pulses and duty cycle 0.5%.
5. Calculated continuous drain current based on maximum allowable junction temperature.
6. 100% tested by conditions of L=0.1mH, IAS=15A, VGS=10V, VDD=30V
7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB09N06FP
CYStek Product Specification


Part Number MTB09N06FP
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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