MTB09N06I3 Datasheet | CYStech Electronics

Features - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Pb-free lead plating and halogen-free package Symbol Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB09N06I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, UA: 80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C912I3 Issued Date : 2015.05.30 Revised Date : 2015.06.01 Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V(silicon limit) (Note 1) Continuous Drain Current @TC=100°C, VGS=10V(silicon limit) (Note 1) Continuous Drain Current @TC=25°C, VGS=10V(package limit) (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Notes 2 & 4) Continuous Drain Current @TA=70°C, VGS=10V (Notes 2 & 4) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=0.1m H, ID=45A, VDD=25V (Note...