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MTB09N06I3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package Symbol MTB09N06I3 Outline TO-251 G:Gate D:Drain S:Source G DS Ordering Information Device Package Shipping MTB09N06I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compo.

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Datasheet Details

Part number MTB09N06I3
Manufacturer CYStech Electronics
File Size 337.45 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB09N06I3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C912I3 Issued Date : 2015.05.30 Revised Date : 2015.06.01 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB09N06I3 BVDSS ID@VGS=10V, TC=25°C 60V 50A RDS(ON)@VGS=10V, ID=20A 7.6 mΩ(typ) RDS(ON)@VGS=4.5V, ID=20A 9.