MTB090N06I3 - N-Channel Enhancement Mode Power MOSFET
CYStech Electronics
Key Features
Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and halogen-free package
Symbol
MTB090N06I3
Outline
TO-251
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTB090N06I3-0-UJ-G
Package
Shipping
TO-251 (Pb-free lead plating and halogen-free package)
80 pcs/tube, 100 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packi.
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CYStech Electronics Corp.
Spec. No. : C420I3 Issued Date : 2014.07.11 Revised Date : Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB090N06I3 BVDSS ID@VGS=10V
RDSON(TYP)
VGS=10V, ID=3A VGS=4.
MTB090N06I3 Datasheet
